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| 石墨烯气泡应变效应的太赫兹近场显微成像研究 |
| Terahertz near-field microscopy study on the strain effect of graphene bubbles |
| 投稿时间：2025-03-18 |
| DOI：10.3969/j.issn.1005-5630.202503180058 |
| 中文关键词: 太赫兹散射式扫描近场光学显微镜 石墨烯 应变工程 纳米气泡 |
| 英文关键词:terahertz scattering-type scanning near-field optical microscopy graphene strain engineering nanobubbles |
| 基金项目:国家重点研发计划(2023YFF0719200) |
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| 中文摘要: |
| 利用太赫兹散射式扫描近场光学显微镜（terahertz scattering-type scanning near-field optical microscopy，THz s-SNOM）测试了石墨烯气泡的太赫兹近场响应，分析了单层和多层石墨烯气泡在太赫兹波段的应变效应。太赫兹近场显微成像测量结果表明，单层石墨烯气泡应变区域的近场信号幅值减弱，而多层（层数≥2）石墨烯气泡的近场信号幅值增强。这一应变效应归因于单层和多层石墨烯在应变下的层间电子耦合和输运特性的差异。本研究为理解石墨烯在太赫兹波段的应变效应及其在太赫兹功能器件中的应用提供了重要依据。 |
| 英文摘要: |
| In this paper, terahertz scattering-type scanning near-field optical microscopy (THz s-SNOM) was used to test the terahertz near-field response of graphene bubbles, and the strain effects of single-layer and few-layer graphene bubbles in the terahertz band were analyzed. The results of terahertz near-field microscopy showed that the near-field signal amplitude of the single-layer graphene bubbles strain region were weakened, while the near-field signal amplitude of the graphene bubbles with few layers (layer ≥ 2) were enhanced. This strain effect is attributed to the difference in the electron coupling and transport characteristics between the layers of single-layer and few-layer graphene under strain. This study provides an important basis for understanding the strain effect of graphene in the terahertz band and its application in terahertz functional devices. |
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