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| 基于金−硅复合结构的等离激元热电子光电探测器 |
| Plasmonic hot-electron photodetector based on Au-Si composite structure |
| 投稿时间：2025-02-25 |
| DOI：10.3969/j.issn.1005-5630.202502250035 |
| 中文关键词: 肖特基结 表面等离激元 热电子 光电探测 |
| 英文关键词:Schottky junction surface plasmon hot electrons photodetection |
| 基金项目:国家自然科学基金(61875126) |
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| 中文摘要: |
| 等离子体纳米结构能够通过表面等离激元共振衰减诱导产生热电子，将等离子体金属与半导体相连接，热载流子有望超过半导体带间跃迁的带隙限制被收集，使得亚带隙红外光子的探测成为可能。制备了工艺简单的基于硅基的金属?半导体结构器件，通过金属辅助化学刻蚀在n型硅表面制备出随机且密集排列的纳米结构，并将其与等离子体金属薄膜相结合，制得近红外光探测器件。该结构将间接带隙半导体硅的光致发光范围拓展至可见波段，且具有优异的抗反射性能。器件在420～1030 nm波长范围内的光响应效率最高为4.25 A/W，在–1 V偏置下光电流达到了3.38 mA，开关比接近34。不对称电流?电压曲线证明了金?硅肖特基结的存在，并基于金?硅肖特基结对热电子输运进行了详细的理论分析。该探测器制备工艺简单，不需要昂贵的新材料和复杂的加工工艺，为构建用于近红外成像的低成本光电探测器提供了新的途径。 |
| 英文摘要: |
| Plasma nanostructures are capable of generating hot electrons through surface plasmon resonance decay, thereby enabling the coupling of plasmonic metals with semiconductors. These hot carriers are anticipated to surpass the bandgap limitations associated with interband transitions in semiconductors and can be efficiently collected, thus facilitating the detection of sub-bandgap infrared photons. In the present study, a straightforward silicon-based metal-semiconductor structure was fabricated. By employing metal-assisted chemical etching, random and densely packed nanostructures were etched onto the surface of n-type silicon. These structures were subsequently integrated with plasmonic metal thin films to form a near-infrared photodetector. This configuration resulted in a shift of the photoluminescence range of the indirect bandgap semiconductor silicon into the visible spectrum, accompanied by superior anti-reflection properties. The maximum optical response efficiency achieved was 4.25 A/W within the wavelength range of 420 nm to 1030 nm, with a photocurrent of 3.38 mA at bias of –1 V, and an on/off ratio approaching 34. The asymmetric current-voltage characteristics confirmed the formation of the Au-Si Schottky junction, and a detailed theoretical analysis of hot electron transport through the Au-Si Schottky junction was conducted. The proposed detector offers the advantage of simple fabrication, eliminating the need for costly new materials and complex processes, thus providing a promising pathway for the development of low-cost photodetectors suitable for near-infrared imaging sensor applications. |
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