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| 磁控溅射制备碳化硼薄膜的结构与成分分析 |
| Structural and component analysis of boron carbide films prepared by magnetron sputtering |
| 投稿时间：2023-03-13 |
| DOI：10.3969/j.issn.1005-5630.202303130055 |
| 中文关键词: 中子光学 碳化硼薄膜 直流磁控溅射 透射电子显微镜（TEM） X射线光电子能谱（XPS） 中子探测 |
| 英文关键词:neutron optics boron carbide film direct current magnetron sputtering transmission electron microscopy X-ray photoelectron spectroscopy neutron detection |
| 基金项目:国家自然科学基金（U1932167, 12175254, 11875204, U2032166, 11975255, 12227810）；中央高校基本科研业务费专项资金(22120210446, 22120180070) |
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| 中文摘要: |
| 近年来国际上3He资源的短缺造成了基于3He的中子探测器高昂的成本，而以碳化硼薄膜作为中子转换层的硼基中子探测器逐渐成为了最有前景的替代方案。通过直流磁控溅射制备了Ti/B4C多层膜，并使用透射电子显微镜（TEM）、飞行时间二次离子质谱（ToF-SIMS）、X射线光电子能谱（XPS）等手段对薄膜的结构与成分进行表征。结果表明：Ti层存在结晶情况；H、O、N元素为薄膜内部的主要杂质，且多分布于Ti层与B4C-on-Ti过渡层中；更高的本底真空度能够降低碳化硼薄膜内的杂质含量，提高B含量占比；中子探测效率测试结果证明本底真空度的提高能够有效提高碳化硼中子转换层的效率。 |
| 英文摘要: |
| In recent years, the world’s shortage of 3He resources has led to the high cost of 3He neutron detectors. The boron-based neutron detectors using boron carbide films as neutron conversion layers have gradually become the most promising alternative. In this paper, we prepared Ti/B4C multilayers using direct current magnetron sputtering method. The structure and composition of the films were characterized by transmission electron microscopy (TEM), time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray photoelectron spectroscopy (XPS). The results show that there is crystallization in the Ti layer. H, O, N are the main impurities in the films, and are mainly distributed in the Ti layer and B4C-on-Ti transition layer. Higher base pressure can reduce the impurity content and increase the proportion of B content in the boron carbide films, thus improving the neutron conversion efficiency of the films. The results of neutron detection efficiency test prove that the high base pressure can effectively improve the efficiency of boron carbide neutron conversion layers. |
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