用户登录
期刊信息
  • 主管单位:
  • 中国科学技术协会
  • 主办单位:
  • 中国仪器仪表学会、上海光学仪器研究所、中国光学学会工程光学专业委员会
  • 主  编:
  • 庄松林
  • 地  址:
  • 上海市军工路516号上海理工大学《光学仪器》编辑部
  • 邮政编码:
  • 200093
  • 联系电话:
  • 021-55270110
  • 电子邮件:
  • gxyq@usst.edu.cn
  • 国际标准刊号:
  • 1005-5630
  • 国内统一刊号:
  • 31-1504/TH
  • 邮发代号:
  • 单  价:
  • 15.00
  • 定  价:
  • 90.00
纳米光栅集成的双肖特基结石墨烯波长探测器
Nanograting-integrated dual Schottky junction graphene wavelength detector
投稿时间:2024-01-03  
DOI:10.3969/j.issn.1005-5630.202401030001
中文关键词:  波长探测器  石墨烯  肖特基结  激光打印  滤波片
英文关键词:wavelength detector  graphene  Schottky junction  laser printing  filter
基金项目:上海市启明星扬帆专项(23YF1429500);上海市集成电路领域定向项目(21DZ1100500)
作者单位E-mail
孟旭东 上海理工大学 光子芯片研究院上海 200093
上海理工大学 光电信息与计算机工程学院上海 200093 
 
董毅博 上海理工大学 光子芯片研究院上海 200093  
陈希 上海理工大学 光子芯片研究院上海 200093 xichen@usst.edu.cn 
摘要点击次数: 201
全文下载次数: 314
中文摘要:
      波长探测器是一种能够区分入射光波长的光电器件,在安全检测、生物医学等领域得到广泛应用。波长探测器正朝着小尺寸、高性能、易集成的方向发展。研究了一种纳米光栅超表面与石墨烯–硅–石墨烯探测器集成的单像素的波长探测器。其原理是使用双光子飞秒激光打印技术在两个对称反向的石墨烯–硅肖特基结上集成不同的纳米柱超表面滤波片。在不同入射波长下,两个纳米柱滤波片的透射率不同,会导致两个肖特基结的光响应不同,通过测试不同偏压下器件的光电流和暗电流就可以探测出入射波长。实验表明,该波长探测器能够识别波长为450~700 nm的可见光。当偏压为0.1 V时,该波长探测器的响应度为0.19 μA/W,响应速度小于1 ms,分辨率约为14.1 nm。该器件具有高集成度、单像素探测的优点,为未来多功能探测器的高密度片上集成提供了新的思路和方法。
英文摘要:
      Wavelength detectors are optoelectronic devices distinguishing the wavelength of incident light and have been used for applications including safety detection and biomedicine. Nowadays, wavelength detectors are developed to realize small size, high performance, and feasible integration. In this paper, a single-pixel wavelength detector was fabricated based on an integration of a graphene-silicon-graphene detector on a nanograting metasurface, in which two nanopillar metasurface filters were printed on symmetrically reversed graphene-silicon Schottky junctions using two-photon femtosecond laser printing technology. The transmittance of the two nanopillar filters was tuned under different incident wavelengths, resulting in different optical responses of the Schottky junctions. The incident wavelength could be detected by measuring the photocurrent and dark current of the device under different bias voltages. The results demonstrated that the wavelength detector could detect visible light with wavelengths rang of 450 nm to 700 nm, with a responsivity of 0.19 μA/W at a bias voltage of 0.1 V and a response speed of less than 1 ms, and the resolution was about 14.1 nm. The device exhibits the advantages of high integration and single-pixel detection, providing an innovative pathway toward high-density on-chip integration of multifunctional detectors.
HTML   查看全文  查看/发表评论  下载PDF阅读器
关闭