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| 二氧化钒薄膜制备工艺及其在开关器件的应用研究进展 |
| Research progress on preparation of vanadium dioxide thin films and applications of modulators and switches |
| 投稿时间：2020-12-01 |
| DOI：10.3969/j.issn.1005-5630.2021.03.012 |
| 中文关键词: 薄膜 二氧化钒 开关器件 相变特性 |
| 英文关键词:thin film vanadium dioxide switching device phase transition characteristics |
| 基金项目: |
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| 中文摘要: |
| 二氧化钒薄膜由于其相变特性在多个不同领域中被广泛研究。针对其在开关器件方面的应用，介绍了近年来国内外常见的二氧化钒薄膜制备工艺研究进展并比较其优缺点，同时从不同二氧化钒相变的外部激励机制对国内外基于二氧化钒研发的开关器件进行了介绍，以期为今后的二氧化钒相变开关的研究提供参考。 |
| 英文摘要: |
| Vanadium dioxide thin films have been widely studied in many different fields due to their phase transition characteristics. Aiming at its application in switching devices, the research progress of common vanadium dioxide thin films at home and abroad in recent years is introduced and their advantages and disadvantages are discussed. At the same time, from the perspective of vanadium dioxide phase change caused by different external excitations, the switch devices developed based on vanadium dioxide at home and abroad are introduced in order to provide a reference for future research on vanadium dioxide phase change switches. |
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