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| VO2/GaAs异质结的制备及其光电特性研究 |
| Study on preparation of VO2/GaAs heterojunction and its optical and electrical properties |
| 投稿时间：2020-03-10 |
| DOI：10.3969/j.issn.1005-5630.2021.02.007 |
| 中文关键词: VO2 GaAs 半导体-金属相变 异质结 整流特性 |
| 英文关键词:VO2 GaAs semiconductor-metal phase transition heterojunction rectifier characteristics |
| 基金项目:国家高技术研究发展计划（863 计划）（2006AA03Z348）；教育部科学技术研究重点项目（207033）；上海市科学技术委员会科技攻关计划（06DZ11415）；上海市教育委员会科技创新重点项目（10ZZ94）；上海领军人才培养计划资助项目（2011-026） |
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| 中文摘要: |
| 采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO2/p-GaAs异质结，研究了不同退火温度和退火时间对VO2/GaAs异质结性能的影响，并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明，在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO2薄膜，相变前后电阻变化约2个数量级。VO2/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性，对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V，该结果为基于VO2相变特性的异质结光电器件的设计与应用提供了可行性。 |
| 英文摘要: |
| n-VO2/p-GaAs heterojunctions were successfully prepared on a p-type GaAs single crystal substrates using a DC magnetron sputtering and post-annealing process. The effects of different annealing temperatures and annealing times on the properties of the VO2/GaAs heterojunctions were investigated and their crystalline orientation, chemical components, film quality, and optoelectronic properties were analyzed. The results show that we can obtain the best VO2 film with phase transition performance for annealing time 2 hours at annealing temperature 693 K, and the resistance change before and after phase transition is about 2 orders of magnitude. VO2/GaAs heterojunctions have excellent rectifying characteristics at 308 K, 318 K, 328 K and corresponding threshold jump voltages of 6.9 V, 6.6 V and 6.2 V, respectively. The results provide feasibility for the design and application of heterojunction devices based on VO2 phase transition characteristics. |
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