|
| 石墨烯热电器件栅控特性研究 |
| Research on characteristics of gate-controlled graphene thermoelectric device |
| 投稿时间：2020-01-07 |
| DOI：10.3969/j.issn.1005-5630.2020.06.008 |
| 中文关键词: 热电器件 石墨烯 迁移率 塞贝克系数 |
| 英文关键词:thermoelectric devices graphene mobility Seebeck coefficient |
| 基金项目:国家自然科学基金青年基金（61804096） |
|
| 摘要点击次数: 0 |
| 全文下载次数: 1 |
| 中文摘要: |
| 为了获得一种稳定可控的能源，提出一种栅控石墨烯热电器件。通过对石墨烯通道的载流子输运机理的分析，获得了温度和栅压对通道电阻的影响。依据半经典Mott公式推导了石墨烯塞贝克系数的表达式，同时给出了石墨烯的电导率和热导率模型。最后通过有限元分析(FEA)建模获得不同栅压条件下的器件温度，当栅极电压VB=0 V时，石墨烯热电器件热端和冷端温度差为30 K；当VB=6 V时，最大温差达到50 K；当VB=30 V时，最小温差只有10 K。结果表明，栅压对热电器件的性能有明显的调控性。该研究可为石墨烯热电器件的设计提供理论参考。 |
| 英文摘要: |
| In order to obtain a stable and controllable energy source, a gate-controlled graphene thermoelectric device was proposed in this paper. The effects of temperature and gate voltages on channel resistance were obtained by the carriers’ transport mechanism of graphene channels. According to the semiclassical Mott formula, the expression of graphene Seebek coefficient was derived. The conductivity and thermal conductivity models of graphene were also exhibited. Finally, the finite element analysis (FEA) method was used to obtain the device temperatures under different gate voltages. When back-gate voltage VB=0 V, the temperature difference between the hot and cold side of graphene thermoelectric devices is 30 K; when VB=6 V, the maximum temperature difference reaches 50 K; when VB=0 V, the minimum temperature difference is only 10 K. The results show that the gate voltage has obvious regulation on the performance of thermoelectric devices. This article provides a theoretical reference for the design of graphene thermoelectric devices. |
| HTML 查看全文 查看/发表评论 下载PDF阅读器 |
| 关闭 |
