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| 半导体载流子分布的太赫兹近场显微表征 |
| Terahertz near-field microscopic characterization of carrier distribution in semiconductors |
| 投稿时间：2020-05-21 |
| DOI：10.3969/j.issn.1005-5630.2020.06.005 |
| 中文关键词: 扫描近场光学显微镜 太赫兹 纳米成像 半导体 |
| 英文关键词:scanning near-field optical microscopy terahertz nano-imaging semiconductor |
| 基金项目:国家重点研发计划（2017YFF0106304，2016YFF0200306） |
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| 中文摘要: |
| 基于自建的太赫兹散射型扫描近场显微镜系统（THz s-SNOM），研究了其在显微表征半导体载流子浓度分布中的应用。对基于半导体硅的静态随机存取存储器（SRAM）的纳米结构进行了近场显微成像测量，并采用可见光调控本征硅样品表面的载流子浓度，实现了不同浓度（1014～1017 cm−3）光生载流子的近场检测。结果表明，此THz s-SNOM能够对半导体微纳结构的载流子分布进行高空间分辨率的显微表征，测量结果与基于偶极子模型的计算结果具有较好的吻合度。 |
| 英文摘要: |
| We demonstrate the microscopic characterization of charge carriers in semiconductors by using a home-built terahertz scattering-type scanning near-field optical microscopy (THz s-SNOM). Based on the near-field imaging of a silicon device (static random-access memory, SRAM), it is shown that the THz s-SNOM is capable of mapping carrier distribution in nano-sized semiconductor devices. THz near-field signals of photo-generated carriers with different concentration in an intrinsic silicon wafer are measured. The measured dependence of near-field signal on carrier concentration (1014～1017 cm−3) is in good agreement with calculated results based on a dipole model of near-filed interaction. |
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