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  • 主管单位:
  • 中国科学技术协会
  • 主办单位:
  • 中国仪器仪表学会、上海光学仪器研究所、中国光学学会工程光学专业委员会
  • 主  编:
  • 庄松林
  • 地  址:
  • 上海市军工路516号上海理工大学《光学仪器》编辑部
  • 邮政编码:
  • 200093
  • 联系电话:
  • 021-55270110
  • 电子邮件:
  • gxyq@usst.edu.cn
  • 国际标准刊号:
  • 1005-5630
  • 国内统一刊号:
  • 31-1504/TH
  • 邮发代号:
  • 单  价:
  • 15.00
  • 定  价:
  • 90.00
移动加热源法制备单层硒化镓晶体
Fabrication of monolayer gallium selenide crystal by moving the heating source
投稿时间:2019-09-23  
DOI:10.3969/j.issn.1005-5630.2020.02.009
中文关键词:  单层GaSe  化学汽相沉积法  移动加热源  机电设备  自动精密移动
英文关键词:monolayer GaSe  chemical vapor deposition method  moving the heating source  electromechanical equipment  automatic precision movement
基金项目:国家自然科学基金(11674230)
作者单位E-mail
徐颖 上海理工大学 光电信息与计算机工程学院上海 200093  
谷付星 上海理工大学 光电信息与计算机工程学院上海 200093 gufuxing@163.com 
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全文下载次数: 184
中文摘要:
      为了解决硒化镓(GaSe)晶体制备困难、化学性能差的问题,对GaSe晶体传统的化学汽相沉积制备方法进行了改进,采用移动加热源法制备GaSe晶体。搭建了GaSe晶体的制备装置,通过单片机精确调控制备晶体的高温炉的加热温度、移动位置等参数,并采用光学显微镜和原子力显微镜对所制备的GaSe晶体进行辅助表征。研究表明,利用移动加热源法可以制备出表面光滑且尺寸较大的单层二维GaSe晶体。由于对机电设备实现了自动精密移动,可对单层二维GaSe晶体实现高质量大批量的制备,有利于GaSe晶体在光电子学和纳电子学中的广泛应用。
英文摘要:
      In order to solve the problem of difficulty in preparation of gallium selenide (GaSe) crystals and poor chemical properties, the traditional chemical vapor deposition (CVD) preparation method for GaSe crystal is improved, and the moving heating source method for preparing GaSe crystal is adopted. A movable device for preparing GaSe crystals is built, driven by a single-chip microcomputer. The parameters such as heating temperature and moving position of the high-temperature furnace for preparing crystals are precisely controlled, and the characterization of the prepared GaSe crystal is carried out by optical microscopy (OM) and atomic force microscopy (AFM). According to this research, the monolayer smooth-faced large two-dimensional GaSe crystal is obtained by moving the heating source method. Due to the automatic precision movement of the electromechanical equipment, the high-quality large-scale production of monolayer two-dimensional GaSe crystals is realized, which is conducive to the wide application of GaSe crystals in optoelectronics and nanoelectronics.
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