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| PECVD制备光学氮化硅薄膜均匀性分析研究 |
| Study on uniformity of silicon nitride optical film by PECVD |
| 投稿时间:2014-02-10 |
| DOI:10.3969/j.issn.1005-5630.2014.04.019 |
| 中文关键词: PECVD 光学薄膜 均匀性 |
| 英文关键词:PECVD optical thin film uniformity |
| 基金项目: |
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| 中文摘要: |
| 采用等离子体增强化学气相沉积(PECVD)技术制备的光学薄膜,其均匀性受到多种工艺参数的影响,在这些参数中,一类是沉积过程的工艺参数;另一类则是设备结构参数,设备结构参数决定着反应腔室内气流分布、以及电场分布等.通过改变沉积过程的工艺参数和一组正交试验,分析各个工艺参数对均匀性的影响,从而改善氮化硅薄膜均匀性. |
| 英文摘要: |
| The uniformity of an optical film prepared by plasma enhanced chemical vapor deposition (PECVD) is affected by many processing parameters, including equipment structure parameters which affect air flow distribution and electronic-field distribution of reaction chamber. This paper studies the influence of different deposition processing parameters over the film uniformity so as to optimize the uniformity of nitride silicon films. |
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