|
| SiO2薄膜斜角蒸镀工艺研究 |
| Research on the process of SiO2 film in glancing angle deposition |
| |
| DOI: |
| 中文关键词: 低折射率 SiO2 薄膜 斜角蒸镀工艺 |
| 英文关键词:low refracting index SiO2 film glancing angle deposition process |
| 基金项目: |
|
| 摘要点击次数: 4449 |
| 全文下载次数: 341 |
| 中文摘要: |
| 利用斜角蒸镀工艺镀制SiO2薄膜是获得低折射率薄膜的一个有效方法。通过电子束蒸发镀膜方式,利用自制的斜角蒸镀装置,研究了SiO2材料在斜角蒸镀工艺中薄膜倾斜角度与沉积角度的关系,薄膜沉积厚度与设定厚度的关系,薄膜折射率与沉积角度的关系。实验表明利用斜角蒸镀工艺镀制低折射率薄膜是可行的。实验得到了折射率为1.10的SiO2薄膜,并得到了重要的SiO2的折射率与沉积角度关系曲线。 |
| 英文摘要: |
| Depositing SiO2 film by glancing angle deposition process is an effective way to get a low refracting index film. Through electronic beam evaporating, with the use of a home-made glancing angle deposition device, the processing parameters of SiO2 in glancing angle deposition are analysed, which includes the relationship of glancing angle and depositing angle, depositing thickness and set thicknessm, refracting index and depositing angle. A lot of experimental findings indicate that the obtaining of a low refracting index film by glancing angle deposition is a feasible way. SiO2 film with 1.10 refracting index and the relationship curve of refracting index of SiO2 and depositing angle are obtained from the expriments. |
| HTML 查看全文 查看/发表评论 下载PDF阅读器 |
| 关闭 |
|
|
|