|
| 减小SiO2光波导表面粗糙度的ICP干法刻蚀工艺研究 |
| Improvement of ICP etching process for reducing the surface roughness of SiO2 optical waveguides |
| 修订日期：2006-02-27 |
| DOI： |
| 中文关键词: Si基SiO2光波导 ICP刻蚀 表面粗糙度 |
| 英文关键词:silicon-based SiO2 optical waveguide,ICP etching,surface roughness |
| 基金项目: |
| 孙淼 时尧成 戴道锌 刘柳 |
| 浙江大学现代光学仪器国家重点实验室光及电磁波研究中心 浙江州310058 |
| 摘要点击次数: 3335 |
| 全文下载次数: 15 |
| 中文摘要: |
| 波导表面粗糙度引起的散射损耗是SiO2光波导传输损耗的主要来源,通过降低表面粗糙度可以获得低损耗SiO2光波导.通过优化ICP干法刻蚀工艺的各参数(如温度、压强、气体流量、感应/偏置功率等)获得了低粗糙度的SiO2光波导,并采用SEM和AFM对刻蚀表面粗糙度进行了定量测试.采用优化刻蚀工艺可将表面粗糙度从35.4nm降低到3.6nm,波导传输损耗约为0.1dB/cm. |
| 英文摘要: |
| Scattering loss caused by surface roughness of waveguides is the main source of waveguide propagation loss.We can obtain a low loss optical waveguide by reducing the waveguide surface roughness.In this paper,all the parameters of the process of ICP etching,such as the temperature,the pressure in the chamber,the flow rate of reactive gases,the reactive/bias power are optimized to obtain SiO2 optical waveguides with a small surface roughness.An atom force microscope with a high accuracy is used for the measurement of the surface roughness.A very small surface roughness of 3.6nm is achieved under the optimal etching condition.The propagation loss of the fabricated SiO2 waveguide is about 0.1dB/cm. |
| HTML 查看全文 查看/发表评论 下载PDF阅读器 |
| 关闭 |
