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| 工艺参数和沉积方法对ZnS／YbF3薄膜缺陷的影响 |
| The influence of technology parameters and deposition methods on defects of ZnS/YbF3 monolayer and multilayer optical thin film |
| 修订日期：2005-11-07 |
| DOI： |
| 中文关键词: 薄膜 缺陷 基底温度 蒸发速率 |
| 英文关键词:thin film,defect,substrate temperature,evaporate rate |
| 基金项目: |
| 凌秀兰 黄伟 |
凌秀兰(中北大学信息工程系,山西,太原,030051)
;黄伟(中科院光电技术研究所,四川,成都,610209)
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| 中文摘要: |
| 研究了不同沉积方式和工艺参数对沉积在K9基底上的单层ZnS、YbF3薄膜和多层ZnS/YbF3薄膜缺陷的影响,发现基底温度和蒸发速率等工艺参数对缺陷的产生有较大的影响,太高或太低的基底温度和蒸发速率都会导致缺陷增加,采用电子束蒸发和蒸发源形状不同的阻蒸蒸发方式,缺陷密度分布有较大的差异.通过比较不同蒸发方式和工艺参数所镀薄膜的缺陷密度,找到了现有工艺条件下缺陷密度最小的最佳蒸发方式和工艺参数. |
| 英文摘要: |
| The influence of technology parameters and deposition methods on defects of ZnS/YbF_3 monolayer and multilayer optical thin film deposited on K9 substrate is investigated.It is discovered that technology parameters such as substrate temperature and evaporate rate have major influence on the origin of defect.Too high or too low substrate temperature and evaporate rate will cause the increasing of defect density.In different deposition methods,defect density make a difference.By making a comparison of defect density in thin film coated by different deposition method and technology parameters,preferable coating technology is obtained,which defect density are decreased to minimum. |
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