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| 1.55μm超辐射发光管端面减反射膜的研究 |
| Facet antireflection coating of 1.55μm superluminescent diode |
| 修订日期:2006-06-30 |
| DOI: |
| 中文关键词: 减反射膜 挡板调制法 超辐射发光管 |
| 英文关键词:antireflection coating,mask modulator method,superluminescent diode |
| 基金项目: |
| 聂明局 刘德明 胡必春 |
| 华中科技大学光电子工程系 湖北武汉430074 |
| 摘要点击次数: 2524 |
| 全文下载次数: 17 |
| 中文摘要: |
| 减反射膜层折射率和厚度的精密监控是超辐射发光管的关键技术.分析了超辐射发光管端面减反射膜的四种膜系,提出了监控薄膜厚度的挡板调制、高级次过正极值法.采用该法制备超低剩余反射膜的实验表明:单面镀膜后,砷化镓基片的剩余反射率达到0.04%;管芯的反馈谐振被抑制,出现超辐射现象,峰值波长从1610nm移动到1560nm,蓝移约60nm,光谱纹波小于0.3dB. |
| 英文摘要: |
| The index of refraction and the layer thickness of single-layer coatings have to be strict controlled to meet for producing a high-quality single-layer antireflection coating on laser diodes facets.Analysised the facet antireflection coating of superluminescent diode.A mask modulator method combining multi-order,overshoot quantities of turning point monitoring technique are described.One facet coated LDs is driven and ASE spectra are measured.The residual reflectivity of coated GaAs is about 0.04%,the center wavelength shifts about 60 nm from 1610 nm to 1560 nm and the ripple in the gain is less than 0.3 dB. |
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