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| HgCdTe光伏器件多层钝化膜等离子体处理的研究 |
| Study of plasma treatment on multi-layer film for HgCdTe photovoltaic detector |
| 修订日期:2006-06-30 |
| DOI: |
| 中文关键词: O 2清洗 Ar 刻蚀 钝化 HgCdTe光伏探测器 |
| 英文关键词:O~+_2 cleaning,Ar~+ etching,passivation,HgCdTe photovoltaic detector, |
| 基金项目: |
| 储开慧 乔辉 汤英文 陈江峰 胡亚春 贾嘉 李向阳 龚海梅 |
| 中国科学院上海技术物理研究所传感技术联合国家重点实验室 上海200083 |
| 摘要点击次数: 2366 |
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| 中文摘要: |
| 在HgCdTe光伏探测器件SiO2 ZnS复合介质膜钝化中,引入O 2清洗和Ar 刻蚀两种等离子体处理工艺,大大提高薄膜附着力,成功制备出优良的光伏器件.对处理前后的样品进行场发射扫描电子显微镜扫描、原子力显微镜扫描和二次离子质谱测试后发现,O 2清洗对去除样品表面的残余光刻胶效果显著;而Ar 刻蚀使ZnS表面更为粗糙,增加了成核中心,使SiO2和ZnS表面互相渗透,增强了两层介质膜的附着力. |
| 英文摘要: |
| SiO_2+ZnS multi-layer film is often used for HgCdTe photovoltaic detector.But this kind of passivation is likely to have adhesion problem.By the introduction of O~+_2 cleaning and Ar~+ etching into the preparation,the adhesion problem can be solved.It is clearly showed that most of residual photoresist can be removed after O~+_2 cleaning.It is also indicated that Ar~+ etching process is helpful for ZnS surface coarsening and nucleation to form the mixing interface between SiO_2 and ZnS films and thus improve the adhesion of these two dielectric films. |
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