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| 离子束溅射工艺中的基片温度及其控制方法 |
| Samples'''' temperature in ion beam sputtering and its control |
| 修订日期：2003-11-30 |
| DOI： |
| 中文关键词: 基片温度,离子束溅射,温控技术 |
| 英文关键词:samples' temperature,ion beam sputtering,temperature control |
| 基金项目: |
| 贾嘉 陈新禹 |
| 中国科学院上海技术物理研究所传感技术国家重点实验室，中国科学院上海技术物理研究所传感技术国家重点实验室 上海200083，上海200083 |
| 摘要点击次数: 2461 |
| 全文下载次数: 19 |
| 中文摘要: |
| 离子束溅射技术以其在制备薄膜中的独特优点,成为获得高性能薄膜材料的重要手段。对于薄膜的制备,基片的温度是一个重要参数。主要从薄膜结构、应力和附着力三个方面总结了基片温度对离子束溅射工艺中薄膜生长的影响,并结合实际情况,介绍了在离子束刻蚀、溅射和磁控溅射镀膜工艺中的一些温度控制方法。在实际操作中,要根据沉淀薄膜的要求和离子束溅射的具体方法及设备,并结合基片本身的结构特点来考虑基片的控温措施及温度范围。 |
| 英文摘要: |
| Film materials have been extensively studied because of its wide use in modern electronics. Sputtering method, for its particular advantages, has become the most potential technology in film materials' preparation. The samples' temperature is an important factor in films' preparation. In the paper, the temperature effects in films' structure, stress and adhesion have been summarized. And some methods of temperature control in plasma etching, ion beam sputter deposition and magnetron sputtering are proposed. According to practical use, the method and the facilities to be used in the film's preparation should be taken into account to determine the temperature range and control measures of the samples. |
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