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| SBN60铁电薄膜横向电光系数及M—Z波导半波电压的研究 |
| Measurement of electro-optic coefficients in SBN60 and their applications in M-Z type waveguide modulators |
| 修订日期:2003-11-30 |
| DOI: |
| 中文关键词: 横向电光系数,M-Z薄膜波导调制器,半波调制电压 |
| 英文关键词:transverse electro-optic coefficient,M-Z type modulator,half-wave modulation voltage |
| 基金项目:浙江省自然科学基金资助项目(500077)。 |
| 沈智如 叶辉 沈伟东 曹晓燕 郭冰 邹桐 |
| 浙江大学现代光学仪器国家重点实验室,浙江大学现代光学仪器国家重点实验室,浙江大学现代光学仪器国家重点实验室,浙江大学现代光学仪器国家重点实验室,浙江大学现代光学仪器国家重点实验室,浙江大学现代光学仪器国家重点实验室 浙江杭州310027,浙江杭州310027,浙江杭州310027,浙江杭州310027,浙江杭州310027,浙江杭州310027 |
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| 中文摘要: |
| 主要介绍MgO衬底上掺K和不掺K的SBN60铁电薄膜的横向电光系数r51的测量,并由此设计一种MgO衬底上M-Z型薄膜波导调制器,并计算出此种波导调制器的半波调制电压,实验说明掺入K离子能减少其半波调制电压。 |
| 英文摘要: |
| High-quality z-axis oriented SBN60 thin films on MgO(001) substrates have been grown by sol-gel process, The transverse electro-optic coefficients r_(51) of the SBN60 and potassium ion doped SBN60 thin films were measured respectively. M-Z type waveguide modulators made of SBN60 thin films were designed. The half-wave modulation voltage was demonstrated to be decreased with the K ion doping. |
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